Method for Making Aluminum Single Crystal Interconnections On Insulators > 자유게시판

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Thus, with reference to FIG. 22C, by offering the groove in the fabric C which has a great wettability with the fabric A, the contact angle thereof was decreased and the boundary space was elevated with out rising the quantity of the agglomeration material, so that a uniform filling was achieved no matter whether the groove is positioned densely or not. Alternatively, with reference to FIG. 25B, the excess metal storing area may be formed in a manner that it circumvents the wiring pattern. Moreover, the wiring metal is stuffed in the groove of the wiring region by agglomeration, and the residual excess metallic movie could also be left in the area of no wiring. In order to resolve such issues, it is necessary to avoid the case the place the quantity of Al to be crammed within the groove is in excess of what is critical so that the spherically agglomerated Al islands are formed and to avoid the case the place the Al quantity is in in need of what is necessary so that the interconnection is disconnected.

There are used the sputtering method and the bias sputtering approach for film formation of the wiring metallic. Then, the method to be utilized for eradicating the native oxide movie could also be a bodily sputtering using atoms akin to Ar or a elimination method using an etching fuel comparable to a halogen. In the primary through fifth embodiments, when there is formed the native oxide movie on the surface of the wiring metal movie, the metallic skinny film may be filled into the groove by agglomeration after the native oxide film is removed. Moreover, a groove is formed on the thermal oxide film, thereafter, the C movie 24 with numerous film thicknesses is formed and the Al movie is filled into the groove by agglomeration. The thermal expansion is a phenomenon such that a bonding distance between atoms is modified by a thermal power. The surface vitality below a system of the thermal equilibrium state is expressed by the next equation. The surface or interfacial tension beneath the thermal equilibrium is determined by material alone no matter a state thereof.

Within the above experience and calculation, there was demonstrated that the fill-in effectivity to the groove is improved by improving the wettability and on this case it was assumed that the quantity of fabric to be filled in is equal to or lower than the amount of the groove. Accordingly, the control of the wettability can enhance the fill-in efficiency so as to scale back the floor energy but additionally control the quantity of the metallic which is to be stuffed in the groove. Even in a case the place the spherically agglomerated Al islands in touch with the single-crystal interconnection might be removed at a later process, there could also be remained a crystal grain boundary in a portion of the one-crystal interconnection after the elimination thereof, thus presumably contributing to the reduction of wiring reliability. The fact that there is sort of no crystal defects within the wiring construction according to the fifth embodiment was confirmed by the applicant through TEM. That the crystal grain boundaries do not consequence within the bending portion or the wire connecting portion was duly confirmed by the TEM evaluation. Moreover, when the spherically agglomerated Al island is in contact with the Al traces stuffed in the groove, that there exists a grain boundary within the neighborhood of the contact portion was discovered for the first time by the applicant utilizing a TEM (Transmission Electron Microscope).

However, although the agglomerated material is extended over the groove in order to be crammed into the groove, the material B which exceeds the quantity of the wiring groove is agglomerated spherically on the interconnection, thus inflicting to form the grain boundary. In distinction thereto, the wiring formed thus in the sixth embodiment can assure 10 Fit for the current density exceeding 10.sup.6 A/cm.sup.2. FIG. 27 reveals a structure of the electrode wiring in line with the sixth embodiment. Next, with reference to FIG. 28B, there is selectively formed a deposition layer 36 serving as a barrier metal, on the bottom of the contact gap 35. Then, the barrier metallic was selectively formed on the only backside face of the contact gap 35. However, the barrier metallic could also be formed over the whole floor of the interlayer insulator including the wiring groove 34 and the contact hole 35. On this case, the barrier steel formed in the world excluding the inner floor of the groove and make contact with hole could also be removed before the Al is formed, or the steel may be eliminated together in a later stage of the technique of removing the Al. Let us show by a simulation that the higher the wettability between an upper layer and a decrease layer deposited on the higher layer is, the efficiency of the upper materials into the groove formed on the surface of the decrease materials is improved.

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